| Nom & Prénom : | Wissem Fathallah |
| Email : | Wissem_Fathallah |
| Adresse : |
| Télécommunications: Ondes & Propagations, Communications Optiques, Micro-Ondes & Antennes. |
| Publications Scientifiques
Journaux
1. A. Bchetnia, I. Kemis, A. Touré,W. Fathallah, T. Boufaden and B. El Jani, ‘’GaN thermal decomposition in N2 AP-MOCVD environment’’, Semicond. Sci. Technol. 23(2008) 125025.
2. W. Fathallah, T. Boufaden and B. El Jani “Analysis of GaN decomposition in an atmospheric MOVPE vertical reactor”,Physica-Status-Solidi (c) 4, No 1, (2007) 145-149.
3. I. Halidou, Z. Benzarti, H. Fitouri, W. Fathallah, and B. El Jani“ GaN property evolution at all stages of MOVPE Si/N treatment growth”,Physica-Status-Solidi (c) 4, (2007) 129-132.
4. A. Rebey, W. Fathallah and B. El Jani “In depth study of the compensation in annealed heavily carbon doped GaAs”,Microelectronics Journal 35 (2004) 891-895.
5. A. Rebey, Z. Chine, W. Fathallah and B. El Jani “Comparative study between electrical and structural properties of heavily doped GaAs”,Microelectronics Journal 34(2003)843-848.
6. W. Fathallah, H. Sakli, and T. Aguili, "Electromagnetic Wave Propagation in Anisotropic Metamaterial Waveguides", JNM, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. Oct 2014. DOI: 10.1002/jnm.2029 Impact Factor 0.63
7. W. Fathallah, H. Sakli, and T. Aguili, “Scattering Matrix Analysis of Uniaxial Anisotropic Metamaterial Waveguide Discontinuities”, IRECAP, International Journal on Communications Antenna and Propagation, Vol. 4, No 3, p. 87-93 June 2014. Impact Factor in SCOPUS: 5.91
8. W. Fathallah, H. Sakli, and T. Aguili, “Rigorous Study of Forward and Backward Waves in Metamaterial Waveguides”, IRECAP, International Journal on Communications Antenna and Propagation, Vol. 4, No 3, p. 94-98 June 2014. Impact Factor in SCOPUS: 5.91
9. H. Sakli, W. Fathallah, K. Issa and T. Aguili, "Guided Modes in rectangular waveguides partially filled with single negative metamaterial slab”, JMSE, Journal of Materials Science and Engineering A 3 (3) (2013) 205-208.
Conférences
1. W. Fathallah, H. Sakli and T. Aguili, “Rigorous Study of the Rectangular Waveguides Fully-Filled with Anisotropic Metamaterial”, International Conference on Information Processing and Wireless Systems (IP-WiS) March 2013, Djerba, Tunisia.
2. W. Fathallah, H. Sakli and T. Aguili, “Full-Wave Study of Rectangular Metamaterial Waveguides Using Galerkin’s Method”, 8th International Multi-Conference on Systems, Signals and Devices, (SSD’13), March 2013, Hammamet, Tunisia.
3. H. Sakli, W. Fathallah and T. Aguili, "Propagation Constant of a Rectangular Waveguides Partially Filled With Metamaterial Slab", the 3rd International Conference on Metamaterials, Photonic Crystals, META’12, 19–22 April, 2012, Paris, France
4. W. Fathallah, T. Boufaden, S. Haffouz, B. El Jani “Etude de la décomposition thermique du GaN par réflectométrie multi-ondes ”, 2ème Colloque Tunisien sur les Materiaux, Hammamet Nord 07-10 Avril 2007.
5. W. Fathallah, T. Boufaden, B. El Jani , “Analysis of GaN decomposition in an atmospheric MOVPE reactor”, International Conference on Blue Lasers and Light Emitting Diodes (ISBLLED), Montpellier (France) May 15-19, 2006.
6. I. Halidou, Z. Benzarti, H. Fitouri, W. Fathallah, B. El Jani , “GaN property evolution at all stages of MOVPE SiN treatment growth method”, International Conference on Blue Lasers and Light Emitting Diodes (ISBLLED), Montpellier (France) May 15-19, 2006.
7. W. Fathallah, A. Rebey and B. El Jani, “Under standing GaN surface roughness evolution during thermal decomposition using in-situ Laser Reflectometry”, 7ème Colloque National de Recherche en Physique, El Kantaoui-Sousse 20-23 décembre 2005.
8. W. Fathallah, A. Rebey, B. El Jani, “ Caractérisation in-situ et ex-situ de GaAs fortement dopé carbone élaboré par Epitaxie en Phase Vapeur d’Organométalliques”, 7ème Journées Francophones des Jeunes Physico-Chimistes, Monastir, Tunisie 19-21 Mars 2004.
9. W. Fathallah, A. Rebey, B. El Jani, “ Caractérisation par diffraction des rayons X à haute résolution de GaAs fortement dopé carbone”, 5th Edward A Bouchet International Conference on Physics and high Technology, Hammamet Tunisia 11-15 August 2003.
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